NLM’s premier organic nonlinear optical materials with high electro-optic effects.
Our organic electro-optic (OEO) material products, HLD and JRD1, are produced, validated, and supported by the NLM team and available under evaluation/R&D or commercial licenses. They are the world’s highest-performing EO materials, enabling record bandwidth (speed) and power efficiency in EO components.
Our materials bring a long history of R&D at the University of Washington to the market. They allow components to run 100x faster than standard microprocessors and use 1000x less power than competing solutions.
At NLM, and with our partners and customers, we’re continuously advancing hybrid OEO technologies to revolutionize computing and communications. Our materials are available today and will push technological innovation and help us build a more sustainable future.
Advantages of NLM’s OEO materials
- Better stability, as the Pockels effect yields a linear and chirp-free response.
- Improved intrinsic bandwidth due to inherently ultrafast response time of OEO (electronic displacement) compared to incumbent inorganic materials like LiNbO3 (atomic displacement).
- Higher electro-optic activity, up to 10x that of incumbent inorganic material LiNbO3, enabling smaller devices and lower drive voltages, with voltage-length products (VπL) in the 50-500 V-μm range.
- Small device footprints possible (<10 μm2), allowing for in-chip implementation and no significantly increased device bulk.
- Lives up to current and future demands with ultrafast responses and large bandwidths (> 500 GHz demonstrated for related materials).
EO modulators exhibiting the Pockels effect are typically used when converting electrical signals to optical signals within optical telecommunication networks. Hybrid EO technology composed of organic materials and silicon device architecture leverages the large EO response of organic chromophores. Additionally, small device sizes are enabled by silicon on insulator (SOI) fabrication. Organic EO materials have achieved record bandwidths and switching speeds when implemented in hybrid devices, as well as energy efficiencies on the order of 100 aJ/bit.
Applications for HLD and JRD1
While computing changes and grows, here are some already identified industry applications for them:
- Optical networking
- Optical computing
- RF photonics
- Optical neural networks
- Terahertz radiation sources/detectors
Device types ready for HLD and JRD1 integration:
- Plasmonic-organic hybrid (POH) devices
- Silicon-organic hybrid (SOH) devices
- Phase, Mach-Zehnder, and IQ modulators
- Frequency combs and beam steering
- Optical frequency mixers (antennas)
HLD is a high-performing organic material with superior thermal stability suitable for commercial applications. It has up to 10X the performance of lithium niobate (LiNbO3) and is entirely organic, meaning no rare-earth materials are used. It’s on the market and ready to integrate with your technology and devices.
Advantages of NLM’s HLD
HLD materials will improve your current technologies and make way for future innovations.
- Thermally stability with no drop in r33 after 500 hours at 85 °C is a key distinguishing feature. Device operation has been demonstrated in up to 140 °C temperatures, enabling use in demanding thermal environments.
- Crosslinked material is resistant to many common solvents. This allows for other processing steps – such as depositing other materials, cleaning, encapsulation, etc. – to happen without dissolving the EO material.
- Crosslinking technology to preserve acentric order for locked-in, stable performance.
Performance stability >500 hours at 85 °C
Electro-optic activity with crosslinking
Physical properties of HLD
- Electro-optic coefficient (r33) at 1310 nm:
- Up to 460 pm/V without crosslinking (in a parallel plate configuration)
- Up to 290 pm/V with crosslinking (in a parallel plate configuration)
- Refractive index at 1550 nm (from VASE) = 1.83 – 1.85
- Thin film absorption maximum (λmax): 782 nm
- Hyperpolarizability (β) in CHCl3: 2120 ± 50 x 10-30 esu
- Thermal stability: > 500 hours at 85 °C (long-term), up to 140 °C (short-term)
- Td > 250 °C
- Poling temperature: 105 °C
- Tg (pre-crosslinking): 63-73 °C
- Crosslinking temperature range: 105-160 °C
- Tg (post-crosslinking): 139-175 °C
Truly a workhorse, JRD1 is an OEO material with record-high electro-optic activity, over 10x that of LiNbO3. JRD1 was first reported in 2014. It has been extensively studied, with citations in over 50 papers, and has been used in many different device designs. Its excellent solubility affords facile processing and ensures fast results in prototyping new devices and applications.
Advantages of NLM’s JRD1
Here’s how JRD1 materials will advance your current technologies and pave the way for future innovations.
- Easy-to-use: the solution is processable in an array of solvents.
- Relatively inexpensive and affordable when compared to other OEO materials.
- Extensive literature on device applications means JRD1’s proven record gives your applications a head start.
Physical properties of JRD1
- Electro-optic coefficient (r33):
- Up to 390 pm/V in a silicon-organic hybrid device at 1550 nm
- Up to 556 pm/V in a parallel plate configuration at 1310 nm
- Refractive index at 1550 nm (from VASE) = 1.83 – 1.85
- Thin film absorption maximum (λmax): 800 nm
- Hyperpolarizability (β) in CHCl3 at 1300 nm: 3330 x 10-30 esu ± 50 x 10-30
- Thermal stability: < 50 °C
- Td: 226 °C
- Poling temperature: ~85-90 °C
- Tg: 82 °C
HLD or JRD1 for your project?
Both HLD and JRD1 are easy to work with and highly soluble in a wide range of solvents. The first thing to consider is your thermal needs and where you are in your product development. The major difference between the materials is that HLD contains chemical functionalities that allows it to crosslink (polymerize), forming a durable and thermally stable film. JRD1 does not contain these groups, which reduces cost and simplifies processing, but restricts application to operations at less than ~50 °C. HLD offers stability at much higher temperatures with a maximum operating temperature of ~140 °C and long-term stability at > 85 °C, enabling long-term use under demanding thermal conditions. JRD1 is comparatively lower-cost and enables somewhat higher EO performance.
Of course, we are happy to help you determine the best options for you and your application.
Eight steps to processing HLD and JRD1
OEO materials are highly desired for their ease of processing. These materials can be prepared neatly as a thin film, or with a polymer host system, by dissolving them in a variety of compatible solvents.
1. Dissolve chromophore powder in solution. JRD1 is a single component. HLD consists of two precursors, HLD1 and HLD2. Solutions should be made shortly before use (< 24 hours). HLD precursors should NOT be mixed before use.
2. Apply the solution to the substrate to create a thin film. This can be performed with a number of coating or printing techniques.
3. Dry and anneal films at the elevated temperature specified.
4. Perform any final metallization (if needed for device architecture) and passivation steps.
5. Perform an electric field poling process to orient chromophore molecules.
6. (Optional, HLD only) Perform additional crosslinking step for enhanced thermal stability.
7. Perform device testing.
8. Complete encapsulation and packaging.
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